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                                MT41K256M16TW-107 XIT:P
                                                                    Zuhause
                                                                    Semiconductors
                                                                    Memory ICs
                                                                    DRAM

Micron Tech MT41K256M16TW-107 XIT:P

Hersteller:

Micron Tech

Mfr.Part #:

MT41K256M16TW-107 XIT:P

Paket:

RoHS:
Datenblatt:

MT41K256M16TW-107 XIT:P

Beschreibung:

DRAM DDR3 4G 256MX16 FBGA

ECAD Model:
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Manufacturer Micron Technology
Product Category DRAM
RoHS
Mounting Style SMD/SMT
Product Type DRAM
Package / Case FBGA-96
Moisture Sensitive Yes
Series MT41K
Packaging Tray
Brand Micron
Subcategory Memory & Data Storage

Product Details

MT41K256M16TW-107 XIT:P DDR3L SDRAM Data Sheet AddendumMT41K1G4 – 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banksDescription DDR3L SDRAM (1.35V ) is a low voltage version of the DDR3 (1.5V ) SDRAM. Refer to DDR3 (1.5V ) SDRAM (Die Rev.: E) data sheet specifications when running in 1.5V compatible mode.Features• V DD = V DDQ = 1.35V (1.283–1.45V )• Backward compatible to V DD = V DDQ = 1.5V ±0.075V– Supports DDR3L devices to be backward com- patible in 1.5V applications• Differential bidirectional data strobe• 8 n-bit prefetch architecture• Differential clock inputs (CK, CK#)• 8 internal banks• Nominal and dynamic on-die termination (ODT ) for data, strobe, and mask signals• Programmable CAS (READ) latency (CL)• Programmable posted CAS additive latency (AL)• Programmable CAS ( WRITE) latency (CWL)• Fixed burst length (BL) of 8 and burst chop (BC) of 4(via the mode register set [MRS])• Selectable BC4 or BL8 on-the-fly (OTF)• Self refresh mode• T C of 0°C to +95°C– 64ms, 8192-cycle refresh at 0°C to +85°C– 32ms at +85°C to +95°C• Self refresh temperature (SRT )• Automatic self refresh (ASR)• Write leveling• Multipurpose register• Output driver calibrationOptionsMarking• Configuration – 1 Gig x 4 1G4 – 512 Meg x 8512M8– 256 Meg x 16256M16 • FBGA package (Pb-free) – x4, x8 – 78-ball (8mm x 10.5mm) Rev. P DA • FBGA package (Pb-free) – x16 – 96-ball (8mm x 14mm) Rev. P TW • Timing – cycle time – 938ps @ CL = 14 (DDR3-2133) -093 – 1.07ns @ CL = 13 (DDR3-1866) -107 – 1.25ns @ CL = 11 (DDR3-1600) -125 • Special Options– Premium Lifecycle Product (PLP) X • Operating temperature– Commercial (0°C ≤ T C ≤ +95°C) None – Industrial (–40°C ≤ T C ≤ +95°C) IT • Revision P Table 1: Key Timing Parameters Speed GradeData Rate (MT/s)Target t RCD- t RP-CLtRCD (ns)tRP (ns)CL (ns) -093 1, 2 213314-14-14 13.0913.0913.09 -107 1186613-13-13 13.9113.9113.91 -125160011-11-11 13.7513.7513.75 Notes: 1. Backward compatible to 1600, CL = 11 (-125). 2. Backward compatible to 1866, CL = 13 (-107). 4Gb: x4, x8, x16 DDR3L SDRAM Addendum Description PDF: X26P4QTWDSPK-13-10329 4gb_1_35v_ddr3l_xit_addendum.pdf - Rev. A 02/16 EN1 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2016 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. Table 2: Addressing Parameter 1 Gig x 4512 Meg x 8256 Meg x 16 Configuration 128 Meg x 4 x 8 banks64 Meg x 8 x 8 banks32 Meg x 16 x 8 banks Refresh count 8K8K8K Row address 64K (A[15:0])64K (A[15:0])32K (A[14:0]) Bank address 8 (BA[2:0])8 (BA[2:0])8 (BA[2:0]) Column address 2K (A[11, 9:0])1K (A[9:0])1K (A[9:0]) Page size 1KB1KB2KB Figure 1: DDR3L Part Numbers Example Part Number: MT41K256M16TW-107 XIT:PConfiguration1 Gig x 4512 Meg x 8256 Meg x 161G4512M8256M16-ConfigurationMT41KPackageSpeedRevisionRevision:P:CommercialIndustrial temperature{NoneITPackageMarkMarkRev.Speed GradetCK = 1.07ns, CL = 13tCK = 1.25ns, CL = 11-093-125Temperature78-ball 8mm x 10.5mm FBGAPDAtCK = .938ns, CL = 14-10796-ball 8mm x 14mm FBGAPTWSpecial Options XPremium Lifecycle Product (PLP) MarkMarkMark Note:1. Not all options listed can be combined to define an offered product. Use the part catalog search on http://www.micron.com for available offerings. FBGA Part Marking Decoder Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from thepart number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Micron’s Web site: http://www.micron.com. 4Gb: x4, x8, x16 DDR3L SDRAM Addendum Description PDF: X26P4QTWDSPK-13-10329 4gb_1_35v_ddr3l_xit_addendum.pdf - Rev. A 02/16 EN2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2016 Micron Technology, Inc. All rights reserved. Revision History Rev. A – 02/16 • Initial release based on the 4Gb x4, x8, x16 DDR3L SDRAM, Rev. N 12/15 data sheet 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-4000www.micron.com/products/support Sales inquiries: 800-932-4992 Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization \ some- times occur. 4Gb: x4, x8, x16 DDR3L SDRAM Addendum Revision History PDF: X26P4QTWDSPK-13-10329 4gb_1_35v_ddr3l_xit_addendum.pdf - Rev. A 02/16 EN3 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2016 Micron Technology, Inc. All rights reserved. chipmall Electronics Micron Technology:   MT41K512M8DA-107 XIT:P TR  MT41K256M16TW-107 XIT:P TR  MT41K256M16TW-107 XIT:P  MT41K512M8DA- 107 XIT:P MT41K256M16TW-107 XIT:P
MT41K256M16TW-107 XIT:P DDR3L SDRAM Data Sheet AddendumMT41K1G4 – 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banksDescription DDR3L SDRAM (1.35V ) is a low voltage version of the DDR3 (1.5V ) SDRAM. Refer to DDR3 (1.5V ) SDRAM (Die Rev.: E) data sheet specifications when running in 1.5V compatible mode.Features• V DD = V DDQ = 1.35V (1.283–1.45V )• Backward compatible to V DD = V DDQ = 1.5V ±0.075V– Supports DDR3L devices to be backward com- patible in 1.5V applications• Differential bidirectional data strobe• 8 n-bit prefetch architecture• Differential clock inputs (CK, CK#)• 8 internal banks• Nominal and dynamic on-die termination (ODT ) for data, strobe, and mask signals• Programmable CAS (READ) latency (CL)• Programmable posted CAS additive latency (AL)• Programmable CAS ( WRITE) latency (CWL)• Fixed burst length (BL) of 8 and burst chop (BC) of 4(via the mode register set [MRS])• Selectable BC4 or BL8 on-the-fly (OTF)• Self refresh mode• T C of 0°C to +95°C– 64ms, 8192-cycle refresh at 0°C to +85°C– 32ms at +85°C to +95°C• Self refresh temperature (SRT )• Automatic self refresh (ASR)• Write leveling• Multipurpose register• Output driver calibrationOptionsMarking• Configuration – 1 Gig x 4 1G4 – 512 Meg x 8512M8– 256 Meg x 16256M16 • FBGA package (Pb-free) – x4, x8 – 78-ball (8mm x 10.5mm) Rev. P DA • FBGA package (Pb-free) – x16 – 96-ball (8mm x 14mm) Rev. P TW • Timing – cycle time – 938ps @ CL = 14 (DDR3-2133) -093 – 1.07ns @ CL = 13 (DDR3-1866) -107 – 1.25ns @ CL = 11 (DDR3-1600) -125 • Special Options– Premium Lifecycle Product (PLP) X • Operating temperature– Commercial (0°C ≤ T C ≤ +95°C) None – Industrial (–40°C ≤ T C ≤ +95°C) IT • Revision P Table 1: Key Timing Parameters Speed GradeData Rate (MT/s)Target t RCD- t RP-CLtRCD (ns)tRP (ns)CL (ns) -093 1, 2 213314-14-14 13.0913.0913.09 -107 1186613-13-13 13.9113.9113.91 -125160011-11-11 13.7513.7513.75 Notes: 1. Backward compatible to 1600, CL = 11 (-125). 2. Backward compatible to 1866, CL = 13 (-107). 4Gb: x4, x8, x16 DDR3L SDRAM Addendum Description PDF: X26P4QTWDSPK-13-10329 4gb_1_35v_ddr3l_xit_addendum.pdf - Rev. A 02/16 EN1 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2016 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. Table 2: Addressing Parameter 1 Gig x 4512 Meg x 8256 Meg x 16 Configuration 128 Meg x 4 x 8 banks64 Meg x 8 x 8 banks32 Meg x 16 x 8 banks Refresh count 8K8K8K Row address 64K (A[15:0])64K (A[15:0])32K (A[14:0]) Bank address 8 (BA[2:0])8 (BA[2:0])8 (BA[2:0]) Column address 2K (A[11, 9:0])1K (A[9:0])1K (A[9:0]) Page size 1KB1KB2KB Figure 1: DDR3L Part Numbers Example Part Number: MT41K256M16TW-107 XIT:PConfiguration1 Gig x 4512 Meg x 8256 Meg x 161G4512M8256M16-ConfigurationMT41KPackageSpeedRevisionRevision:P:CommercialIndustrial temperature{NoneITPackageMarkMarkRev.Speed GradetCK = 1.07ns, CL = 13tCK = 1.25ns, CL = 11-093-125Temperature78-ball 8mm x 10.5mm FBGAPDAtCK = .938ns, CL = 14-10796-ball 8mm x 14mm FBGAPTWSpecial Options XPremium Lifecycle Product (PLP) MarkMarkMark Note:1. Not all options listed can be combined to define an offered product. Use the part catalog search on http://www.micron.com for available offerings. FBGA Part Marking Decoder Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from thepart number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Micron’s Web site: http://www.micron.com. 4Gb: x4, x8, x16 DDR3L SDRAM Addendum Description PDF: X26P4QTWDSPK-13-10329 4gb_1_35v_ddr3l_xit_addendum.pdf - Rev. A 02/16 EN2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2016 Micron Technology, Inc. All rights reserved. Revision History Rev. A – 02/16 • Initial release based on the 4Gb x4, x8, x16 DDR3L SDRAM, Rev. N 12/15 data sheet 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-4000www.micron.com/products/support Sales inquiries: 800-932-4992 Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization \ some- times occur. 4Gb: x4, x8, x16 DDR3L SDRAM Addendum Revision History PDF: X26P4QTWDSPK-13-10329 4gb_1_35v_ddr3l_xit_addendum.pdf - Rev. A 02/16 EN3 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2016 Micron Technology, Inc. All rights reserved. chipmall Electronics Micron Technology:   MT41K512M8DA-107 XIT:P TR  MT41K256M16TW-107 XIT:P TR  MT41K256M16TW-107 XIT:P  MT41K512M8DA- 107 XIT:P MT41K256M16TW-107 XIT:P
Memory Type,Package/Enclosure,封装/外壳,Memory Format,Interface Type,Package,search for,Operating Temperature,Memory Size,,工作电压(范围),安装类型,Supply Voltage,是否无铅,品牌,Manufacturer,最大时钟频率,技术,Product Category,原始制造商,存储容量,存储器格式,高度,包装,Type,长x宽/尺寸,存储温度,Data Bus Width,数据总线宽度,Organization,元件生命周期,制造商标准提前期,存取时间,系列,Product Type,工作温度,时钟频率(Max),Package / Case,写周期时间-字,页,脚间距,接口类型,湿气敏感性等级(MSL),存储器类型,原产国家,最小包装,认证信息,Minimum Operating Temperature,待机电流(Max),零件状态,工作电流(Max),引脚数,Supply Voltage - Min,Supply Voltage - Max,Supply Current - Max,Operating Supply Voltage,Moisture Sensitive,Series,Part # Aliases,Access Time,Subcategory,Unit Weight,Tradename,
,,,,,,,,,,,,,,,Micron Technology,,,DRAM,,,,,,,,,,,,,,,,DRAM,,,FBGA-96,,,,,,,,,,,,,,,,,,Yes,MT41K,,,Memory & Data Storage,,,
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