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Wuxi NCE Power Semiconductor NCE65TF099

650V 38A 89m@10V,19A 322W 3.5V@250uA 1 N-Channel TO-220 MOSFETs ROHS

Hersteller.Part.#:
NCE65TF099
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Hersteller:
NCE
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CM.Teilenummer:C04097847

Paket:TO-220

Datenblatt:
PDF
RoHS:
environment
Lieferung:
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NCE65TF099

NCE

1+
$2.19734
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$1.83168
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$1.60214
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$1.36800
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$1.26086

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AttributWert
Hersteller.Part.#NCE65TF099
HerstellerNCE
ProduktkategorieMOSFETs
RoHSYes
ECCN-
Drain Source Voltage (Vdss)650V
Type1 N-channel
Gate Threshold Voltage (Vgs(th)@Id)3.5V@250uA
Total Gate Charge (Qg@Vgs)45nC@10V
Continuous Drain Current (Id)38A
Drain Source On Resistance (RDS(on)@Vgs,Id)89mΩ@10V,19A
Power Dissipation (Pd)322W
Reverse Transfer Capacitance (Crss@Vds)1.5pF@50V
Input Capacitance (Ciss@Vds)2.8nF@50V
Drain to Source Voltage650V
Operating Junction Temperature Range-55℃~+150℃@(Tj)
Number1 N-Channel
Gate Charge(Qg)45nC@10V
Gate Threshold Voltage (Vgs(th))3.5V
Current - Continuous Drain(Id)38A
RDS(on)89mΩ@10V,19A
Pd - Power Dissipation322W
Input Capacitance(Ciss)2.8nF@50V
PackageTO-220
PackagingTube-packed
Standard Package50
Weight2.74

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